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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 16 i d @ v gs = 12v, t c = 100c continuous drain current 10 i dm pulsed drain current 64 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 83 mj i ar avalanche current 16 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 9.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 3.7 (typical) g c a www.irf.com 1 for footnotes refer to the last page pre-irradiation features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed electrically isolated light weight international rectifiers r6 tm technology provides superior power mosfets for space applications.these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in todayshigh speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. low-ohmic to-257aa tabless radiation hardened IRHYB67230CMpower mosfet 200v, n-channel thru-hole (low-ohmic to-257aa) technology product summary part number radiation level r ds(on) i d IRHYB67230CM 100k rads (si) 0.13 ? 16a irhyb63230cm 300k rads (si) 0.13 ? 16a pd-95818d downloaded from: http:///
IRHYB67230CM pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 16 i sm pulse source current (body diode) 64 v sd diode forward voltage 1.2 v t j = 25c, i s = 16a, v gs = 0v t rr reverse recovery time 300 ns t j = 25c, i f = 16a, di/dt 100a/ s q rr reverse recovery charge 3.2 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page note: corresponding spice and saber models are available on international rectifier web site. thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80
c/w electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.19 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.13 ? v gs = 12v, i d = 10a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient -9.76 mv/c g fs forward transconductance 11 s v ds = 10v, i ds = 10a i dss zero gate voltage drain current 10 v ds = 160v ,v gs = 0v 2 5 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 42 v gs = 12v, i d = 16a q gs gate-to-source charge 10 nc v ds = 100v q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 15 v dd = 100v, i d = 16a, t r rise time 40 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time 35 t f fall time 15 l s + l d total inductance 6.8 ciss input capacitance 1660 v gs = 0v, v ds = 25v c oss output capacitance 206 p f f = 1.0mhz c rss reverse transfer capacitance 2.6 na nh ns a measured from drain lead ( 6mm / 0.025 in from package ) to source lead ( 6mm/ 0.025 in from package ) r g gate resistance 1.75 ? f = 1.0mhz, open drain downloaded from: http:///
www.irf.com 3 pre-irradiation IRHYB67230CM international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 1. part numbers IRHYB67230CM and irhyb63230cm table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds =160v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.134 ? v gs = 12v, i d = 10a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 16a resistance (low ohmic to-257) 0.13 ? v gs = 12v, i d = 10a 0 50 100 150 200 250 -15 -10 -5 0 bias vgs (v) bias vds (v) let=42 5% let=61 5% let=90 5% table 2. typical single event effect safe operating area let ener g y ran g ev d s ( v ) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v 42 5% 2450 5% 205 5% 200 200 200 190 61 5% 825 5% 66 5% 200 200 200 190 90 5% 1470 5% 80 5% 170 170 - - downloaded from: http:///
IRHYB67230CM pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 16a 24681 01 21 41 6 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c downloaded from: http:///
www.irf.com 5 pre-irradiation IRHYB67230CM fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 8. typical threshold voltage vs temperature fig 7. typical drain-to-source breakdown voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 190 200 210 220 230 240 250 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 10 20 30 40 50 60 70 i d , drain current (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c v gs = 12v 4 8 12 16 20 24 v gs, gate -to -source voltage (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 16a t j = 25c t j = 150c downloaded from: http:///
IRHYB67230CM pre-irradiation 6 www.irf.com fig 12. maximum drain current vs. case temperature 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) i , drain current (a) c d 100khz fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage 1 10 100 0 600 1200 1800 2400 3000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 0 1 02 03 04 05 06 0 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 16a for test circuit see figure 17 downloaded from: http:///
www.irf.com 7 pre-irradiation IRHYB67230CM fig 15. maximum effective transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.0a 10a bottom 16a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
IRHYB67230CM pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation IRHYB67230CM pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l = 0.65mh peak i l = 16a, v gs = 12v i sd 16a, di/dt 750a/ s, v dd 200v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/2010 not es : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont roll ing dimens ion: inch. 3. dimens ions are s hown in mill imet ers [inches ]. 4. outline conforms to jedec outline to-257aa. lead assignments 2 = source 1 = drain 3 = gate case outline and dimensions low-ohmic to-257aa (tabless) 0.88 [.035] 0.64 [.025] 123 ? 0.50 [.020] b a 3x ? 2.54 [.100] 10.66 [.420] 10.42 [.410] a 5.08 [.200] 4.83 [.190] b 10.92 [.430] 10.42 [.410] 15.88 [.625] 12.70 [.500] 2x 0.71 [.028] max. 0.13 [.005] 3.05 [.120] c downloaded from: http:///

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